The Metal-Insulator Transition in VO₂ Studied using Terahertz Apertureless Near-Field Microscopy

Authors

Hui Zhan
Victoria Astley
Michael Hvasta
Jason A. Deibel, Wright State University - Main CampusFollow
Daniel M. Mittleman
Yong-Sik Lim

Document Type

Article

Publication Date

2007

Abstract

We have studied the metal-insulator transition in a vanadium dioxide (VO₂) thin film using terahertz apertureless near-field optical microscopy. We observe a variation of the terahertz amplitude due to the phase transition induced by an applied voltage across the sample. The change of the terahertz signal is related to the abrupt change of the conductivity of the VO₂ film at the metal-insulator transition. The subwavelength spatial resolution of this near-field microscopy makes it possible to detect signatures of micron-scale metallic domains in inhomogeneous VO₂ thin films.

Comments

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.2801359.

Repository Citation

Zhan, H., Astley, V., Hvasta, M., Deibel, J. A., Mittleman, D. M., & Lim, Y. (2007). The Metal-Insulator Transition in VO₂ Studied using Terahertz Apertureless Near-Field Microscopy. Applied Physics Letters, 91, 162110.
https://corescholar.libraries.wright.edu/physics/846

DOI

10.1063/1.2801359