Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy

Authors

J. Oila
J. Kivioja
V. Ranki
K. Saarinen
David C. Look, Wright State University - Main CampusFollow
Richard J. Molnar
S. S. Park
S. K. Lee
J. Y. Han

Document Type

Article

Publication Date

5-1-2003

Abstract

Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 10¹⁹ to below 10¹⁶ cm⁻³, as the distance from the interface region increases from 1 to 300 μm. These concentrations are the same as the total acceptor densities determined in Hall experiments. The depth profile of O is similar to that of V_Ga, suggesting that the Ga vacancies are complexed with the oxygen impurities.

Comments

Copyright © 2003, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 82.20, and may be found at http://apl.aip.org/resource/1/applab/v82/i20/p3433_s1

Repository Citation

Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D. C., Molnar, R. J., Park, S. S., Lee, S. K., & Han, J. Y. (2003). Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy. Applied Physics Letters, 82 (20), 3433-3435.
https://corescholar.libraries.wright.edu/physics/85

DOI

10.1063/1.1569414