Traps in AlGaN/GaN/SiC Heterostructures Studied by Deep Level Transient Spectroscopy

Authors

Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow
D. H. Kim
I. Adesida

Document Type

Article

Publication Date

10-1-2005

Abstract

AlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si₃N₄ passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A₁, with activation energy of 1.0 eV and apparent capture cross section of 2×10⁻¹² cm², has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A₁, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Comments

Copyright © 2005, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 87.18, and may be found at http://apl.aip.org/applab/v87/i18/p182115_s1

Repository Citation

Fang, Z., Look, D. C., Kim, D. H., & Adesida, I. (2005). Traps in AlGaN/GaN/SiC Heterostructures Studied by Deep Level Transient Spectroscopy. Applied Physics Letters, 87 (18), 182115.
https://corescholar.libraries.wright.edu/physics/92

DOI

10.1063/1.2126145