Dominant Effect of Near-Interface Native Point Defects on ZnO Schottky Barriers

Authors

L. J. BrillsonFollow
H. L. MosbackerFollow
M. J. HetzerFollow
Y. StrzhemechnyFollow
David C. Look, Wright State University - Main CampusFollow
G. CantwellFollow
J. ZhangFollow
J. J. SongFollow

Document Type

Article

Publication Date

3-1-2007

Abstract

The authors used depth-resolved cathodoluminescence spectroscopy and current-voltage measurements to probe metal-ZnO diodes as a function of native defect concentration, oxygen plasma processing, and metallization. The results show that resident native defects in ZnO single crystals and native defects created by the metallization process dominate metal-ZnO Schottky barrier heights and ideality factors. Results for ZnO(0001) faces processed with room temperature remote oxygen plasmas to remove surface adsorbates and reduce subsurface native defects demonstrate the pivotal importance of crystal growth quality and metal-ZnO reactivity in forming near-interface states that control Schottky barrier properties.

Comments

Copyright © 2007, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 90.10, and may be found at http://apl.aip.org/resource/1/applab/v90/i10/p102116_s1

Repository Citation

Brillson, L. J., Mosbacker, H. L., Hetzer, M. J., Strzhemechny, Y., Look, D. C., Cantwell, G., Zhang, J., & Song, J. J. (2007). Dominant Effect of Near-Interface Native Point Defects on ZnO Schottky Barriers. Applied Physics Letters, 90 (10), 102116.
https://corescholar.libraries.wright.edu/physics/95

DOI

10.1063/1.2711536