Experimental Determination of Quantum-Well Lifetime Effect on Large-Signal Resonant Tunneling Diode Switching Time
Document Type
Article
Publication Date
2015
Abstract
An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.
Repository Citation
Growden, T. A.,
Brown, E. R.,
Zhang, W.,
Droopad, R.,
& Berger, P. R.
(2015). Experimental Determination of Quantum-Well Lifetime Effect on Large-Signal Resonant Tunneling Diode Switching Time. Applied Physics Letters, 107, 153506.
https://corescholar.libraries.wright.edu/physics/960
DOI
10.1063/1.4933258
