Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures

Authors

A. M. Dabiran
A. M. Wowchak
A. Osinsky
J. Xie
Brian Hertzog
David C. Look, Wright State University - Main CampusFollow
P. P. Chow

Document Type

Article

Publication Date

8-1-2008

Abstract

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm²/V s) and sheet charge density (>3×10¹³ cm⁻²), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼ 100 Ω/◻ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼ 1.3 A/mm and a peak transconductance of ∼ 260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented.

Comments

Copyright © 2008, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 93.8, and may be found at http://apl.aip.org/resource/1/applab/v93/i8/p082111_s1

Repository Citation

Dabiran, A. M., Wowchak, A. M., Osinsky, A., Xie, J., Hertzog, B., Look, D. C., & Chow, P. P. (2008). Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures. Applied Physics Letters, 93 (8), 82111.
https://corescholar.libraries.wright.edu/physics/97

DOI

10.1063/1.2970991