Document Type
Article
Publication Date
10-1-2008
Abstract
The free hole carriers in GaN have been limited to concentrations in the low 1018 cm−3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼ 10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼ 1.5×1019 cm−3.
Repository Citation
Namkoong, G.,
Trybus, E.,
Lee, K. K.,
Moseley, M.,
Doolittle, W. A.,
& Look, D. C.
(2008). Metal Modulation Epitaxy Growth for Extremely High Hole Concentrations Above 10(19) Cm(-3) in GaN. Applied Physics Letters, 93 (17), 172112.
https://corescholar.libraries.wright.edu/physics/98
DOI
10.1063/1.3005640
Comments
Copyright © 2008, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 93.17, and may be found at http://apl.aip.org/resource/1/applab/v93/i17/p172112_s1