The free hole carriers in GaN have been limited to concentrations in the low 1018 cm−3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼ 10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼ 1.5×1019 cm−3.
Lee, K. K.,
Doolittle, W. A.,
& Look, D. C.
(2008). Metal Modulation Epitaxy Growth for Extremely High Hole Concentrations Above 10(19) Cm(-3) in GaN. Applied Physics Letters, 93 (17), 172112.