We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data.
Martinez, M. J.,
Look, D. C.,
Sizelove, J. R.,
& Schuermeyer, F. L.
(1995). Monte-Carlo Simulation of Bulk Hole Transport in Alxga1-Xas, in1-Xalxas, and GaAsxsb1-X. Journal of Applied Physics, 77 (2), 661-664.