Document Type

Article

Publication Date

8-1-1995

Abstract

We derive expressions for the depletion width and capacitance transient applicable to traps which may be deep and of high concentration. The new results are compared with those obtained from the commonly used formulas, and also from an exact analysis. Experimental deep level transient spectroscopic data for EL2 in GaAs are in good agreement.

Comments

Copyright © 1995, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 78.4, and may be found at http://jap.aip.org/resource/1/japiau/v78/i4/p2848_s1

DOI

10.1063/1.360086

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