Monte-Carlo Simulation of Bulk Hole Transport in Alxga1-Xas, in1-Xalxas, and GaAsxsb1-X

Authors

M. J. Martinez
David C. Look, Wright State University - Main CampusFollow
J. R. Sizelove
F. L. SchuermeyerFollow

Document Type

Article

Publication Date

1-1-1995

Abstract

We report a Monte Carlo study of hole transport in Al_xGa_1−xAs, In_1−xAl_xAs, and GaAs_xSb_1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data.

Comments

Copyright © 1995, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 77.2, and may be found at http://jap.aip.org/resource/1/japiau/v77/i2/p661_s1

Repository Citation

Martinez, M. J., Look, D. C., Sizelove, J. R., & Schuermeyer, F. L. (1995). Monte-Carlo Simulation of Bulk Hole Transport in Alxga1-Xas, in1-Xalxas, and GaAsxsb1-X. Journal of Applied Physics, 77 (2), 661-664.
https://corescholar.libraries.wright.edu/physics/128

DOI

10.1063/1.359052