Publication Date
2014
Document Type
Thesis
Committee Members
Gregory Kozlowski (Advisor), Doug Petkie (Committee Member), Charles Stutz (Committee Member)
Degree Name
Master of Science (MS)
Abstract
Thin films of SryCa1-yZr1-xTixO3 (SCZT) with x = 0.8, y = 0.01, CaHf1-xTixO3 (CHT) with x = 0.8, and xBiScO3 - (1-x) BaTiO3 with x = 0.36 (BSBT(36/64)) showing a high permittivity are useful both in capacitor applications. These dielectric thin films with a SrRuO3 (SRO) conductive bottom electrodes were prepared by using pulsed laser deposition on <100< La0.3Sr0.7Al0.65Ta0.35O3 (LSAT) single crystal substrates. In a search of optimal conditions to achieve epitaxially grown SCZT, CHT, BSBT(36/64), and SRO thin films, different substrate temperatures (600 C, 650 C, 750 C, and 800 C) and different partial pressures of oxygen (50 mTorr, 100 mTorr and 300 mTorr) in the chamber were used during deposition onto LSAT substrates. The optimized deposition conditions for conductive buffer layer of SRO film required 300 mTorr of oxygen partial pressure and substrate temperature of 750 C. The thorough structural and chemical studies of SCZT, CHT and BSBT(36/64) films were done by using SEM (scanning electron microscopy), AFM (atomic force microscopy), and XRD (X-ray diffraction) measurements. Sputtered gold top electrodes were added to the samples, along with etching to the SRO conductive buffer layer. These conductive electrodes were used to generate an AC electric field between the top electrodes and conductive buffer layer. Electrical characterizations of thin films such as complex permittivity, resistance and capacitance of grains and grain boundaries were performed using AC impedance spectroscopy, with curve fitting using Z-View software.
Page Count
81
Department or Program
Department of Physics
Year Degree Awarded
2014
Copyright
Copyright 2014, all rights reserved. This open access ETD is published by Wright State University and OhioLINK.
