Publication Date
2012
Document Type
Thesis
Committee Members
Marian Kazimierczuk (Committee Member), Lok Lew Yan Voon (Committee Member), Yan Zhuang (Advisor)
Degree Name
Master of Science in Engineering (MSEgr)
Abstract
Traditional CMOS (complementary metal-oxide-semiconductor) transistors have already been in the nanometer range. As bulk silicon material is approaching its physical limits, it is highly desirable to seek novel, functional materials to continue Moore's law. Two-dimensional(2D) materials, such as graphene and silicene, have attracted great attention since they were envisioned a few years ago, having extraordinary electrical properties. Research in this work was focused on understanding the structural and electronic properties of a few atomic layers of carbon (graphene) and silicon (silicene). Atomic structures of the 2D materials, corresponding band structures, and transport properties were calculated based on density functional theory. Band gap was observed in AB forwardly-stacked bilayer silicene with proper layer distance. Applying an external electric field resulted in further opening of the band gap up to 0.19 eV. In addition, transmission spectrum and I-V curves were calculated. A new structure of a thin silicon layer on graphene substrate is proposed, showing different transport properties from 2D silicene.
Page Count
64
Department or Program
Department of Electrical Engineering
Year Degree Awarded
2012
Copyright
Copyright 2012, all rights reserved. This open access ETD is published by Wright State University and OhioLINK.
