Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

Document Type

Conference Proceeding

Publication Date

2000

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Abstract

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ∼ 1×10−4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as x-ray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation.

Comments

Presented at the MRS Fall Meeting, Boston, MA

DOI

dx.doi.org/10.1557/PROC-640-H3.7

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