Mobility Analysis of Highly Conducting Thin Films: Application to ZnO

Authors

David C. Look, Wright State University - Main CampusFollow
K. D. LeedyFollow
D. H. TomichFollow
B. BayraktarogluFollow

Document Type

Article

Publication Date

2-1-2010

Abstract

Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a forming-gas atmosphere (5% H₂ in Ar). The mobility as a function of thickness d is analyzed by a simple formula involving only ionized-impurity and boundary scattering and having a single fitting parameter, the acceptor/donor concentration ratio K = N_A/N_D. For samples with d = 3–100 nm, K_avg = 0.41, giving N_D = 4.7×10²⁰ and N_A = 1.9×10²⁰ cm⁻³. Thicker samples require a two-layer formulation due to inhomogeneous annealing.

Comments

Copyright © 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 96.6, and may be found at http://apl.aip.org/resource/1/applab/v96/i6/p062102_s1

Repository Citation

Look, D. C., Leedy, K. D., Tomich, D. H., & Bayraktaroglu, B. (2010). Mobility Analysis of Highly Conducting Thin Films: Application to ZnO. Applied Physics Letters, 96 (6), 62102.
https://corescholar.libraries.wright.edu/physics/100

DOI

10.1063/1.3310043