P-Type Nitrogen Doped ZnO Films Grown by Thermal Evaporation

Authors

David C. Look, Wright State University - Main CampusFollow
D. Leedy Kevin, Wyle Laboratories
Kiefer Arnold Kiefer, Wright-Patterson Air Force
Claflin Bruce Claflin, Wright-Patterson Air Force
Naho Itagaki, Kyushu University
Koichi Matsushima, Kyushu University
Iping Surhariadi, Kyushu University

Document Type

Article

Publication Date

1-1-2010

Identifier/URL

40938355 (Pure)

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Catalog Record

Abstract

We report the formation of p-type nitrogen doped ZnO (ZnO:N) grown by thermal-evaporation deposition. The effects of nitrogen precursors on the electrical and optical properties of ZnO:N were investigated. This study shows that growth process plays a critical role in the electrical properties of ZnO:N. The chemical reaction mechanism was analyzed.

Comments

Presented at the 2009 MRS Symposium.

Repository Citation

Look, D. C., Kevin, D. L., Arnold Kiefer, K., Bruce Claflin, C., Itagaki, N., Matsushima, K., & Surhariadi, I. (2010). P-Type Nitrogen Doped ZnO Films Grown by Thermal Evaporation. Zinc Oxide and Related Materials - 2009, 1201, 208, 43-49.
https://corescholar.libraries.wright.edu/physics/1537

DOI

10.1557/PROC-1201-H02-08