A Study of Ultrafast Extrinsic Photoconductivity vs Wavelength in ErAs:GaAs Photoconductive Switches
Document Type
Article
Publication Date
1-1-2013
Identifier/URL
40223375 (Pure); 84893355115 (QABO)
Abstract
Extrinsic photoconductivity in an ErAs:GaAs photoconductive (PC) switch is studied as a function of wavelength from 1535 nm to 1793 nm and 2516 nm to 3293 nm; which corresponds to photon energies of 0.69 to 0.81 eV (0.48 to 0.57 UG) and 0.37 to 0.49 eV (0.26 to 0.35 UG). A gradual decline is seen in photoconductive response vs wavelength in the higher energy range, and practically no response in the lower energy range. Also, a series of local peaks is seen in the higher range, suggesting that the absorption is associated with quantum-dot-to-band electron transitions. This is an important step in understanding the new method of creating THz sources from ultrafast extrinsic photoconductivity.
Repository Citation
Taylor, Z. D.,
Garritano, J.,
Tewari, P.,
Diebold, E.,
Sung, S.,
Bajwa, N.,
Nowroozi, B.,
Stojadinovic, A.,
Llombart, N.,
Brown, E. R.,
& Grundfest, W. S.
(2013). A Study of Ultrafast Extrinsic Photoconductivity vs Wavelength in ErAs:GaAs Photoconductive Switches. 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
https://corescholar.libraries.wright.edu/physics/1207
DOI
10.1109/IRMMW-THz.2013.6665470
