Process Dependence of H Passivation and Doping in H-Implanted ZnO
Document Type
Article
Publication Date
2-6-2013
Identifier/URL
40994404 (Pure)
Abstract
We used depth-resolved cathodoluminescence spectroscopy (DRCLS), photoluminescence (PL) spectroscopy and temperature-dependent Hall-effect (TDHE) measurements to describe the strong dependence of H passivation and doping in H-implanted ZnO on thermal treatment. Increasing H implantation dose increases passivation of Zn and oxygen vacancy-related defects, while reducing deep level emissions. Over annealing temperatures of 100–400 °C at different times, 1 h annealing at 200 °C yielded the lowest DRCLS deep level emissions, highest TDHE carrier mobility, and highest near band-edge PL emission. These results describe the systematics of dopant implantation and thermal activation on H incorporation in ZnO and their effects on its electrical properties.
Repository Citation
Teherani, F. H.,
Look, D. C.,
& Rogers, D. J.
(2013). Process Dependence of H Passivation and Doping in H-Implanted ZnO. Journal of Physics D: Applied Physics, 46 (5), 55107.
https://corescholar.libraries.wright.edu/physics/1526
DOI
10.1088/0022-3727/46/5/055107
