Annealing Dynamics of Molecular-Beam Epitaxial GaAs Grown at 200°C

Authors

David C. Look, Wright State University - Main CampusFollow
D. C. Walters
G. D. Robinson
J. R. Sizelove
M. G. Mier
C. E. Stutz

Document Type

Article

Publication Date

7-1-1993

Abstract

By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick substrate, we have been able to obtain accurate Hall‐effect and conductivity data as functions of annealing temperature from 300 to 600 °C. At a measurement temperature of 300 K, analysis confirms that hopping conduction is much stronger than band conduction for all annealing temperatures. However, at higher measurement temperatures (up to 500 K), the band conduction becomes comparable, and a detailed analysis yields the donor and acceptor concentrations and the donor activation energy. Also, an independent absorption study yields the total and charged As_Ga concentrations. Comparisons of all of these quantities as a function of annealing temperature T_A show a new feature of the annealing dynamics, namely, that the dominant acceptor (probably V_Ga related) strongly decreases and then increases as T_A is increased from 350 to 450 °C. Above 450 °C, N_D, N_A, and [As_Ga] all decrease, as is known from previous studies.

Comments

Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 74.1, and may be found at http://jap.aip.org/resource/1/japiau/v74/i1/p306_s1

Repository Citation

Look, D. C., Walters, D. C., Robinson, G. D., Sizelove, J. R., Mier, M. G., & Stutz, C. E. (1993). Annealing Dynamics of Molecular-Beam Epitaxial GaAs Grown at 200°C. Journal of Applied Physics, 74 (1), 306-310.
https://corescholar.libraries.wright.edu/physics/121

DOI

10.1063/1.354108