Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors

Authors

David C. Look, Wright State University - Main CampusFollow
C. E. Stutz
Christopher A. Bozada

Document Type

Article

Publication Date

7-1-1993

Abstract

The classical magnetic‐field‐dependent Hall coefficient and conductivity equations are inverted to give the mobilities μ₁ and μ₂ and carrier concentrations n₁ (or p₁) and n₂ (or p₂) in two degenerate bands. The two‐band solution holds for arbitrary magnetic‐field strength as long as quantum effects can be ignored (i.e., kT≳ℏeB/m∗), and it is argued that the analysis can also be applied to two separate layers up to reasonable field strengths. The results are used to determine the two‐dimensional electron gas mobility and carrier concentration in a modulation‐doped field‐effect transistor with a highly doped cap layer.

Comments

Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 74.1, and may be found at http://jap.aip.org/resource/1/japiau/v74/i1/p311_s1

Repository Citation

Look, D. C., Stutz, C. E., & Bozada, C. A. (1993). Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors. Journal of Applied Physics, 74 (1), 311-314.
https://corescholar.libraries.wright.edu/physics/122

DOI

10.1063/1.354109