The Effect of Er Fraction on THz Power Generated by Extrinsic- Photoconductive ErAs:GaAs Switches Driven at 1550 nm
Document Type
Article
Publication Date
1-1-2013
Identifier/URL
40258712 (Pure); 84893356653 (QABO)
Abstract
Two Er-doped-GaAs photoconductive (PC) switches have been studied in extrinsic mode with different Er fractions of 1% and 2%. The PC switches were driven with a 1550 nm ultrafast laser (hν = 0.56 UG, UG = 1.42 eV for GaAs) and exhibited different THz bandwidths and photoelectric responsivities. These experiments are aimed at optimizing the new extrinsic mode of generating THz radiation in ErAs:GaAs photoconductive devices. This is the first ever demonstration of generating THz power with extrinsic photoconductivity with a 2% Er ErAs:GaAs PC switch. We find that the PC switch with 2% Er concentration produced more THz power and the bandwidth was marginally better.
Repository Citation
Viveros, L.,
Zhang, W.,
& Brown, E. R.
(2013). The Effect of Er Fraction on THz Power Generated by Extrinsic- Photoconductive ErAs:GaAs Switches Driven at 1550 nm. 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
https://corescholar.libraries.wright.edu/physics/1212
DOI
10.1109/IRMMW-THz.2013.6665589
