ZnO Plasmonics for Telecommunications
Document Type
Article
Publication Date
5-6-2013
Identifier/URL
40905537 (Pure)
Abstract
Plasmonic resonances (λres's) at the telecommunication wavelengths of 1.3 and 1.55 μm can be accurately produced in ZnO layers grown at 200 °C by pulsed laser deposition in pure Ar ambient using a ZnO target with 3 wt. % Ga2O3, and then annealed in air to produce Hall-effect-determined carrier concentrations 8.8 and 6.0 × 1020 cm−3, respectively. Appropriate values of concentration and Hall mobility for a desired λres can be conveniently determined from a “plasmonic resonance phase diagram,” generated from the Drude equation and mobility theory. Values of λres as low as 1 μm can be attained in ZnO.
Repository Citation
Wang, B.,
Claflin, B.,
Callahan, M.,
Fang, Z. Q.,
& Look, D. C.
(2013). ZnO Plasmonics for Telecommunications. Applied Physics Letters, 102 (18), 182107.
https://corescholar.libraries.wright.edu/physics/1524
DOI
10.1063/1.4804984
