Critical Comparison of Carrier Lifetime at 1.55 μm of Ion-Irradiated InGaAs, Cold-Implanted InGaAsP, and ErAs:GaAs

Authors

Mads J.H. Larsen, Wright State University
Elliott R. Brown, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

1-1-2012

Identifier/URL

43031225 (Pure)

Abstract

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured with a fiber-based 1550 nm time-resolved differential transmission (?T) set-up. The InGaAs-based materials show a positive ?T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ?T consistent with a two-photon absorption process.

Repository Citation

Larsen, M. J., & Brown, E. R. (2012). Critical Comparison of Carrier Lifetime at 1.55 μm of Ion-Irradiated InGaAs, Cold-Implanted InGaAsP, and ErAs:GaAs. 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.
https://corescholar.libraries.wright.edu/physics/1220

DOI

10.1109/IRMMW-THz.2012.6380277