Stable Highly Conductive ZnO Via Reduction of Zn Vacancies

Authors

David C. Look, Wright State University - Main CampusFollow
Timothy C. Droubay
Scott A. Chambers

Document Type

Article

Publication Date

2012

Abstract

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H₂produces a resistivity of 1.5 × 10⁻⁴ Ω-cm, stable to 500 °C. The resistivity can be further reduced to 1.2 × 10⁻⁴ Ω-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration N_A to 5 × 10¹⁹ cm⁻³, only 3% of the Ga-donor concentration N_D of 1.6 × 10²¹ cm⁻³, with N_D and N_A determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 nm, further bridging the gap between metals and semiconductors.

Comments

Copyright © 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 101.10, and may be found at http://dx.doi.org/10.1063/1.4748869.

Repository Citation

Look, D. C., Droubay, T. C., & Chambers, S. A. (2012). Stable Highly Conductive ZnO Via Reduction of Zn Vacancies. Applied Physics Letters, 101 (10), 102101.
https://corescholar.libraries.wright.edu/physics/749

DOI

10.1063/1.4748869