Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
H. Yamamoto
J. R. Sizelove
M. G. Mier
C. E. Stutz

Document Type

Article

Publication Date

7-15-1994

Abstract

Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×10¹⁶ cm⁻³ is believed to be related to the As_Ga‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.

Comments

Copyright © 1994, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 76.2, and may be found at http://jap.aip.org/resource/1/japiau/v76/i2/p1029_s1.

Repository Citation

Look, D. C., Fang, Z., Yamamoto, H., Sizelove, J. R., Mier, M. G., & Stutz, C. E. (1994). Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures. Journal of Applied Physics, 76 (2), 1029-1032.
https://corescholar.libraries.wright.edu/physics/127

DOI

10.1063/1.357846