Observation of a Metastable Defect Transition in GaAs

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
J. R. Sizelove

Document Type

Article

Publication Date

6-1-1994

Abstract

We show that the well-known 0.15-eV donor in bulk GaAs quenches under IR-light illumination and that the quenched (metastable) state has an electronic transition energy about 0.14 eV deeper than the ground state and can be observed by temperature-dependent-resistivity and Hall-effect measurements. The quenched state thermally recovers by an Auger-like process at a rate of r=2.3×10^-12 nv_n exp(-0.18/kT). Many of the properties exhibited by this donor are similar to those predicted theoretically for the complex defect As_Ga-V_As.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v49/i23/p16757_1

Repository Citation

Look, D. C., Fang, Z., & Sizelove, J. R. (1994). Observation of a Metastable Defect Transition in GaAs. Physical Review B, 49 (23), 16757-16760.
https://corescholar.libraries.wright.edu/physics/197

DOI

10.1103/PhysRevB.49.16757