Spectroscopic Applications and Frequency Locking of THz Photomixing With Distributed-Bragg-Reflector Diode Lasers in Low-Temperature-Grown GaAs
Document Type
Article
Publication Date
9-22-1997
Identifier/URL
40266632 (Pure); 0031237424 (QABO)
Find this in a Library
Abstract
A compact, narrow-linewidth, tunable source of THz radiation has been developed for spectroscopy and other high-resolution applications. Distributed-Bragg-reflector (DBR) diode lasers at 850 nm are used to pump a low-temperature-grown GaAs photomixer. Resonant optical feedback is employed to stabilize the center frequencies and narrow the linewidths of the DBR lasers. The heterodyne linewidth full-width at half-maximum of two optically locked DBR lasers is 50 kHz on the 20 ms time scale and 2 MHz over 10 s; free-running DBR lasers have linewidths of 40 and 90 MHz on such time scales. This instrument has been used to obtain rotational spectra of acetonitrile at 313 GHz. Detection limits of (noise/total power) have been achieved, with the noise floor dominated by the detector’s noise equivalent power.
Repository Citation
Chen, P.,
Blake, G. A.,
Gaidis, M. C.,
Brown, E. R.,
McIntosh, K. A.,
Chou, S. Y.,
Nathan, M. I.,
& Williamson, F.
(1997). Spectroscopic Applications and Frequency Locking of THz Photomixing With Distributed-Bragg-Reflector Diode Lasers in Low-Temperature-Grown GaAs. Applied Physics Letters, 71 (12), 1601-1603.
https://corescholar.libraries.wright.edu/physics/1375
DOI
10.1063/1.119845
