Depth Measurement of Doped Semiconductors Using the Hall Technique

Authors

G. C. DeSalvo
David C. Look, Wright State University - Main CampusFollow
Christopher A. Bozada
J. L. Ebel

Document Type

Article

Publication Date

1-1-1997

Comments

Copyright © 1997, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 81.1, and may be found at http://jap.aip.org/resource/1/japiau/v81/i1/p281_s1

Repository Citation

DeSalvo, G. C., Look, D. C., Bozada, C. A., & Ebel, J. L. (1997). Depth Measurement of Doped Semiconductors Using the Hall Technique. Journal of Applied Physics, 81 (1), 281-284.
https://corescholar.libraries.wright.edu/physics/136

DOI

10.1063/1.363846