InP-Based Self-Aligned Normally-Off Superlattice-Insulated-Gate Field-Effect Transistor
Document Type
Article
Publication Date
10-1-1996
Identifier/URL
40313530 (Pure); 0030269558 (QABO)
Abstract
An InP-based normally-off superlattice-insulated gate field-effect transistor (SIGFET) is developed using a self-aligned implant process. The new gate structure reduces the gate current significantly and yields a sharp pinch off. A SIGFET with 0.7 μm gate length delivers more than 800 mA/mm of drain current at 2 V of forward gate bias and yields an fT as high as 42 GHz. An explanation for a new kink effect is also proposed.
Repository Citation
Chen, C. L.,
Mahoney, L. J.,
& Brown, E. R.
(1996). InP-Based Self-Aligned Normally-Off Superlattice-Insulated-Gate Field-Effect Transistor. IEEE Electron Device Letters, 17 (10), 476-478.
https://corescholar.libraries.wright.edu/physics/1384
DOI
10.1109/55.537080
