Self-Aligned Complementary GaAs MISFETs Using a Low-Temperature-Grown GaAs Gate Insulator
Document Type
Article
Publication Date
2-15-1996
Identifier/URL
43036173 (Pure)
Abstract
GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs. respectively. With a 1.5μm gate length, the maximum drain current is 40 and 120mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500mA/mm for a normally-on n-channel device.
Repository Citation
Chen, C. L.,
Mahoney, L. J.,
Nichols, K. B.,
& Brown, E. R.
(1996). Self-Aligned Complementary GaAs MISFETs Using a Low-Temperature-Grown GaAs Gate Insulator. Electronics Letters, 32 (4), 407-409.
https://corescholar.libraries.wright.edu/physics/1385
DOI
10.1049/el:19960221
