Effects of Low-Temperature-Grown GaAs and AlGaAs on the Current of a Metal-Insulator-Semiconductor Structure
Document Type
Article
Publication Date
1-1-1996
Identifier/URL
40195053 (Pure); 3042933321 (QABO)
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Abstract
GaAs and AlGaAs layers grown by molecular beam epitaxy at low temperatures were used as the insulator in a metal–insulator–semiconductor diode simulating the gate structure of a GaAs metal–insulator–semiconductor field‐effect transistor (MISFET). The diode current increases after the high‐temperature annealing at 800 °C for 10 s, a schedule commonly used for ion‐implantation activation, and the amount of the increase depends strongly on the insulator material and the growth temperature. It appears that the low‐temperature‐grown (LTG) GaAs grown at 200 °C and the LTG Al0.43Ga0.57As grown at 300 °C, both embedded between AlAs barrier layers grown at a normal temperature, are the two best gate insulators when the high‐temperature annealing is a required process for the MISFET. For a diode with a 300‐Å‐thick Al0.43Ga0.57As insulator and 100‐Å‐thick AlAs barriers, 1.42 V forward bias results in a leakage current of 1 nA/μm2. This low diode current proves that the LTG insulator is suitable for the gate of MISFETs.
Repository Citation
Chen, C. L.,
Mahoney, L. J.,
Nichols, K. B.,
Manfra, M. J.,
Brown, E. R.,
Nitishin, P. M.,
Molvar, K. M.,
Gramstorff, B. F.,
& Murphy, R. A.
(1996). Effects of Low-Temperature-Grown GaAs and AlGaAs on the Current of a Metal-Insulator-Semiconductor Structure. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14 (3), 1745-1751.
https://corescholar.libraries.wright.edu/physics/1387
DOI
10.1116/1.588551
