Self-Aligned P-Channel MISFET With a Low-Temperature-Grown GaAs Gate Insulator
Document Type
Article
Publication Date
8-1-1996
Identifier/URL
40212528 (Pure); 0030213035 (QABO)
Abstract
A new p-channel GaAs metal-insulator-semiconductor field-effect transistor (MISFET) using low-temperature-grown (LTG) GaAs as the gate insulator is demonstrated. Neither the GaAs conducting channel nor the gate insulator was doped, and a Be self-aligned implant was used to lower the source and drain series resistance. For a MISFET with a 1.5-μm gate length, the transconductance is 22 mS/mm and the maximum drain current is 120 mA/mm obtained at -8 V of gate bias. The measured unity-current-gain cut-off frequency fT is 2.0 GHz.
Repository Citation
Chen, C. L.,
Mahoney, L. J.,
Nichols, K. B.,
Brown, E. R.,
& Gramstorff, B. F.
(1996). Self-Aligned P-Channel MISFET With a Low-Temperature-Grown GaAs Gate Insulator. IEEE Electron Device Letters, 17 (8), 413-415.
https://corescholar.libraries.wright.edu/physics/1392
DOI
10.1109/55.511592
