Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature
Document Type
Article
Publication Date
7-1-1994
Identifier/URL
40229493 (Pure); 0028462486 (QABO)
Abstract
A resonant tunneling transistor (RTT) utilizing a novel heterodimensional Schottky gate technology is described. The gate is formed by electroplating Pt/Au onto the side of an AlGaAs/GaAs double barrier structure. The gate voltage modulates the drain current by modulating the area of the quasi-two dimensional electron accumulation layer which forms above the source barrier under drain-source bias. Room temperature transistor characteristics included a peak current of 225 mA/mm and peak transconductance of 218 mS/mm. The ultrafine fabrication process is also discussed.
Repository Citation
Peatman, W. C.,
Grimm, W. J.,
Shur, M.,
Brown, E. R.,
Maki, P.,
& Rooks, M. J.
(1994). Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature. IEEE Electron Device Letters, 15 (7), 236-238.
https://corescholar.libraries.wright.edu/physics/1406
DOI
10.1109/55.294081
