Monolithic Optoelectronic Transistor
Document Type
Article
Publication Date
1-1-1993
Identifier/URL
40307993 (Pure); 4243132184 (QABO)
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Abstract
A new optical switching and logic device, the monolithic optoelectronic transistor (MOET), is demonstrated. The MOET is an integrated circuit consisting of a p‐i‐n photodiode, a resonant tunneling diode, a multiple‐quantum‐well modulator, and a field‐effect transistor. The device can function as an optical inverter or NOR gate. Present devices switch at an input optical power of 12.5 μW and have a large‐signal optical gain exceeding ten. The advantages of the MOET include abrupt switching thresholds, saturated ‘‘on’’ and ‘‘off’’ states, and nonlatching operation.
Repository Citation
Aull, B. F.,
Nichols, K. B.,
Maki, P. A.,
Palmateer, S. C.,
Brown, E. R.,
& Lind, T. A.
(1993). Monolithic Optoelectronic Transistor. Applied Physics Letters, 63 (11), 1555-1557.
https://corescholar.libraries.wright.edu/physics/1421
DOI
10.1063/1.110747
