The Monolithic Optoelectronic Transistor
Document Type
Article
Publication Date
1-1-1993
Identifier/URL
43038258 (Pure)
Abstract
We report a new smart-pixel device, the monolithic optoelectronic transistor (MOET). It uses GaAs/AIGaAs multiple-quantum-well p-i-n diodes as both photodetectors for optical input and reflection modulators for optical output The switching action is obtained by using a double-barrier resonant-tunneling diode (RTD). The RTD is connected in series with the input detector and produces an abrupt voltage change at a threshold level of photocurrent This voltage change is amplified by a FET to drive the output modulator.
Repository Citation
Aull, B. F.,
Nichols, K. B.,
Maki, P. A.,
Palmateer, S. C.,
Brown, E. R.,
& Lind, T. A.
(1993). The Monolithic Optoelectronic Transistor. Conference on Lasers and Electro-Optics, CLEO 1993, 10, CPD22.
https://corescholar.libraries.wright.edu/physics/1427
