Small-Signal Admittance and Switching Measurements of the Resonant-Tunneling Diode

Authors

J. P. Mattia, MIT Lincoln Laboratory
Elliott R. Brown, Wright State University - Main CampusFollow
A. R. Calawa, MIT Lincoln Laboratory
M. J. Manfra, MIT Lincoln Laboratory

Document Type

Article

Publication Date

1-1-1993

Identifier/URL

40314912 (Pure); 36449001025 (QABO)

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Abstract

Measurements of the small‐signal admittance and the large‐signal switching time of In0.53Ga0.47As/AlAs resonant‐tunneling diodes are presented. The small‐signal admittance in the positive differential‐resistance region is found to be only a weak function of frequency. In contrast, the admittance in the negative differential‐resistance region is a strong function of frequency, and the associated time constant is a strong function of bias voltage. It is found that the large‐signal switching time is approximately a factor of 10 greater than the small‐signal time constant.

Repository Citation

Mattia, J. P., Brown, E. R., Calawa, A. R., & Manfra, M. J. (1993). Small-Signal Admittance and Switching Measurements of the Resonant-Tunneling Diode. Applied Physics Letters, 63 (4), 521-523.
https://corescholar.libraries.wright.edu/physics/1426

DOI

10.1063/1.109992