Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates

Authors

Elliott R. Brown, Wright State University - Main CampusFollow
F. W. Smith, MIT Lincoln Laboratory
George W. Turner, MIT Lincoln Laboratory
K. A. McIntosh, MIT Lincoln Laboratory
M. J. Manfra, MIT Lincoln Laboratory

Document Type

Article

Publication Date

1-1-1992

Identifier/URL

43037251 (Pure)

Abstract

Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 μm. The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.

Repository Citation

Brown, E. R., Smith, F. W., Turner, G. W., McIntosh, K. A., & Manfra, M. J. (1992). Comparison of GaAs/AlGaAs Quantum-Well IR Detectors Fabricated on GaAs and Si Substrates. Proceedings of SPIE - The International Society for Optical Engineering, 1735, 228-238.
https://corescholar.libraries.wright.edu/physics/1431

DOI

10.1117/12.138635