Strong Intersubband Absorption by Photogenerated Carriers in Quantum Wells
Document Type
Conference Proceeding
Publication Date
1-1-1992
Identifier/URL
43037499 (Pure)
Abstract
Intersubband absorption spectra in the 1O-m region are measured between 4.2 and 290 K in four n-Type GaAs/Al028Ga72As multiple-quantum-well samples. The carriers responsible for the absorption are generated by a cross-gap pump laser operating at 0.75 tim. The absorption strength per unit pump power is found to depend strongly on the background electron sheet density B' and is greatest by far in a sample having B 4x1010 cm2. By measuring the speed of response, the cause of the strong photoabsorption is found to be a long photoelectron lifetime. The sample with the strongest photoabsorption is used to make an efficient C02-laser modulator.
Repository Citation
Brown, E. R.,
McIntosh, K. A.,
& Nichols, K. B.
(1992). Strong Intersubband Absorption by Photogenerated Carriers in Quantum Wells. Proceedings of SPIE - The International Society for Optical Engineering, 1675, 260-270.
https://corescholar.libraries.wright.edu/physics/1434
DOI
10.1117/12.137616
