High-Frequency Resonant-Tunneling Oscillators

Authors

Elliott R. Brown, Wright State University - Main CampusFollow
C. D. Parker, Massachusetts Institute of Technology
A. R. Calawa, Massachusetts Institute of Technology
M. J. Manfra, Massachusetts Institute of Technology
C. L. Chen, Massachusetts Institute of Technology
L. J. Mahoney, Massachusetts Institute of Technology
W. D. Goodhue, Massachusetts Institute of Technology
J. R. Söderströom, California Institute of Technology Division of Engineering and Applied Science
T. C. McGill, California Institute of Technology Division of Engineering and Applied Science

Document Type

Article

Publication Date

1-5-1991

Identifier/URL

40291132 (Pure); 0026416447 (QABO)

Find this in a Library

Catalog Record

Abstract

Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53 Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.

Repository Citation

Brown, E. R., Parker, C. D., Calawa, A. R., Manfra, M. J., Chen, C. L., Mahoney, L. J., Goodhue, W. D., Söderströom, J. R., & McGill, T. C. (1991). High-Frequency Resonant-Tunneling Oscillators. Microwave and Optical Technology Letters, 4 (1), 19-23.
https://corescholar.libraries.wright.edu/physics/1438

DOI

10.1002/mop.4650040108