Oscillations up to 712 GHz in InAs/AlSb Resonant-Tunneling Diodes
Document Type
Article
Publication Date
1-1-1991
Identifier/URL
40223031 (Pure); 34848900870 (QABO)
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Abstract
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.
Repository Citation
Brown, E. R.,
Söderström, J. R.,
Parker, C. D.,
Mahoney, L. J.,
Molvar, K. M.,
& McGill, T. C.
(1991). Oscillations up to 712 GHz in InAs/AlSb Resonant-Tunneling Diodes. Applied Physics Letters, 58 (20), 2291-2293.
https://corescholar.libraries.wright.edu/physics/1440
DOI
10.1063/1.104902
