Effect of Quasibound-State Lifetime on the Oscillation Power of Resonant Tunneling Diodes

Authors

Elliott R. Brown, Wright State University - Main CampusFollow
C. D. Parker, Massachusetts Institute of Technology
T. C.L.G. Sollner, Massachusetts Institute of Technology

Document Type

Article

Publication Date

1-1-1989

Identifier/URL

40184304 (Pure); 36549097924 (QABO)

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Abstract

A new equivalent circuit is derived for the double‐barrier resonant tunneling diode. An essential feature of this circuit is the addition of an inductance in series with the differential conductance G of the device. The magnitude of the inductance is τN/G where τN is the lifetime of the (Nth) quasibound state through which all of the conduction current is assumed to flow. This circuit model is used to derive values of theoretical oscillator power that are in much better agreement with experimental results than theoretical predictions made without the inductance. The conclusion is drawn that the response of the double‐barrier structure to a time varying potential is consistent with the coherent picture of resonant tunneling.

Repository Citation

Brown, E. R., Parker, C. D., & Sollner, T. C. (1989). Effect of Quasibound-State Lifetime on the Oscillation Power of Resonant Tunneling Diodes. Applied Physics Letters, 54 (10), 934-936.
https://corescholar.libraries.wright.edu/physics/1444

DOI

10.1063/1.100812