Oscillations up to 420 GHz in GaAs/AlAs Resonant Tunneling Diodes

Document Type

Article

Publication Date

1-1-1989

Identifier/URL

40187767 (Pure); 36549097968 (QABO)

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Abstract

We report room‐temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1‐nm‐thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal delay associated with the quasibound‐state lifetime. They are also in accordance with a generalized impedance model, described here, that includes the effect of the transit time delay across the depletion layer. Although the peak‐to‐valley ratio of the 420 GHz diode is only 1.5:1 at room temperature, we show that its speed is limited by the parasitic series resistance rather than by the low negative conductance. A threefold reduction in this resistance, along with a comparable increase in the peak‐to‐valley ratio, should allow oscillations up to about 1 THz.

DOI

10.1063/1.102190

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