Electrical Characterization and Deep-Level Transient Spectroscopy of Ge0.873 Si0.104S n0.023 Photodiode Grown on GE Platform by Ultra-High Vacuum Chemical Vapor Deposition
Document Type
Article
Publication Date
5-31-2018
Identifier/URL
40953549 (Pure)
Abstract
Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.
Repository Citation
Wang, B.,
Fang, Z. Q.,
Claflin, B.,
Look, D. C.,
Kouvetakis, J.,
& Yeo, Y. K.
(2018). Electrical Characterization and Deep-Level Transient Spectroscopy of Ge0.873 Si0.104S n0.023 Photodiode Grown on GE Platform by Ultra-High Vacuum Chemical Vapor Deposition. Thin Solid Films, 654, 77-84.
https://corescholar.libraries.wright.edu/physics/1487
DOI
10.1016/j.tsf.2018.03.071
