Growth of YBCO Thin Films on TiN(0 0 1) and CeO2-Coated TiN Surfaces
Document Type
Article
Publication Date
9-15-2002
Abstract
Epitaxial growth of YBa 2 Cu 3 O 7− x (YBCO) layers on TiN(0 0 1) surfaces was explored, both with and without CeO 2 intermediate layers. The epitaxial TiN layers were grown on MgO(0 0 1) and textured Ni substrates. Thin CeO 2 (∼200 nm thick) and YBCO (∼300 nm thick) layers were grown on TiN-coated MgO substrates, using pulsed laser deposition. While YBCO grown directly on TiN was of poor quality, a good epitaxial YBCO layer was obtained using a thin CeO 2 cap layer on the TiN. A superconducting critical transition temperature ( T c ) of 89 K was measured by AC susceptibility. The critical current density ( J c ) was 6×10 5 A/cm 2 obtained at 77 K by whole body transport current measurement in self-field using a 1 μV/cm criteria. These results suggest that transition metal nitrides, such as TiN, are potentially useful as buffer layers for YBCO thin films. Advantages of the nitride buffer layers compared to conventional oxide buffers include high electrical and thermal conductivity, better mechanical toughness, good diffusion barrier characteristics, and relative ease of deposition.
Repository Citation
Kim, I.,
Barnes, P. N.,
Goyal, A.,
Barnett, S. A.,
Biggers, R.,
Kozlowski, G.,
Varanasi, C.,
Maartens, I.,
Nekkanti, R.,
Peterson, T.,
Haugan, T.,
& Sambasivan, S.
(2002). Growth of YBCO Thin Films on TiN(0 0 1) and CeO2-Coated TiN Surfaces. Physica C: Superconductivity and its Applications, 377 (3), 227-234.
https://corescholar.libraries.wright.edu/physics/1569
DOI
10.1016/S0921-4534(01)01200-X
