Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxial GaAs - Hopping in a Dense El2-Like Band

Authors

David C. Look, Wright State University - Main CampusFollow
D. C. Walters
M. O. Manasreh
J. R. Sizelove
C. E. Stutz
K. R. EvansFollow

Document Type

Article

Publication Date

8-1-1990

Abstract

Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effect properties. Here we show conclusively that the room-temperature conduction is due to activated (nearest-neighbor) hopping in a deep defect band of concentration 3×10¹⁹ cm^-3, and energy E_c-0.75 eV, along with conduction due to free carriers thermally excited from this band. At low measurement temperatures, variable-range hopping [σ∝exp(-T₀/T)^1/4] prevails. The conduction-band mobility can be well explained by neutral-deep-donor scattering in parallel with lattice scattering.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v42/i6/p3578_1

Repository Citation

Look, D. C., Walters, D. C., Manasreh, M. O., Sizelove, J. R., Stutz, C. E., & Evans, K. R. (1990). Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxial GaAs - Hopping in a Dense El2-Like Band. Physical Review B, 42 (6), 3578-3581.
https://corescholar.libraries.wright.edu/physics/189

DOI

10.1103/PhysRevB.42.3578