Document Type

Article

Publication Date

8-1-1990

Abstract

Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effect properties. Here we show conclusively that the room-temperature conduction is due to activated (nearest-neighbor) hopping in a deep defect band of concentration 3×1019 cm-3, and energy Ec-0.75 eV, along with conduction due to free carriers thermally excited from this band. At low measurement temperatures, variable-range hopping [σ∝exp(-T0/T)1/4] prevails. The conduction-band mobility can be well explained by neutral-deep-donor scattering in parallel with lattice scattering.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v42/i6/p3578_1

DOI

10.1103/PhysRevB.42.3578

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