Unpinning of GaAs Surface Fermi Level by 200 Degrees C Molecular Beam Epitaxial Layer

Authors

David C. Look, Wright State University - Main CampusFollow
C. E. Stutz
K. R. EvansFollow

Document Type

Article

Publication Date

12-1-1990

Abstract

Previous attempts to passivate the n‐type (100)GaAs surface have significantly reduced only the surface recombination centers, but not the surface acceptors which pin the Fermi level. Here we show that a 100 Å molecular beam epitaxial layer grown at 200 °C reduces the effective surface potential energy − eϕ_s from 0.70 to 0.17 eV, nearly eliminates light sensitivity, and permits nonalloyed ohmic contacts. After a 10 min, 450 °C anneal, − eϕ_s increases only to 0.22 eV.

Comments

Copyright © 1990, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 57.24, and may be found at http://apl.aip.org/resource/1/applab/v57/i24/p2570_s1

Repository Citation

Look, D. C., Stutz, C. E., & Evans, K. R. (1990). Unpinning of GaAs Surface Fermi Level by 200 Degrees C Molecular Beam Epitaxial Layer. Applied Physics Letters, 57 (24), 2570-2572.
https://corescholar.libraries.wright.edu/physics/38

DOI

10.1063/1.104110