Magnetoluminescence Studies in GaAs-Alxga1-Xas Single Heterojunctions - Observation of Parity-Forbidden Landau-Level Transitions

Authors

D. C. ReynoldsFollow
David C. Look, Wright State University - Main CampusFollow
B. Jogai
C. E. Stutz
R. JonesFollow
K. K. BajajFollow

Document Type

Article

Publication Date

10-1-1994

Abstract

We have observed a number of allowed and parity-forbidden Landau-level transitions in a modulation-doped GaAs-Al_xGa_1-xAs single heterojunction structure using photoluminescence-excitation spectroscopy at 2 K. The GaAs layer in this structure is 5000 Å thick. From the allowed Landau-level transitions we determine the reduced mass of the electron-hole pair to be 0.07m_e. Using a heavy-hole mass of 0.45m_e, we determine the average value of the electron effective mass to be 0.084m_e. From the parity-forbidden transitions where the hole Landau level is the same but the electron Landau levels are different, we determine the average value of the electron mass to be 0.085m_e, in excellent agreement with the value determined from the allowed transitions.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v50/i16/p11710_1

Repository Citation

Reynolds, D. C., Look, D. C., Jogai, B., Stutz, C. E., Jones, R., & Bajaj, K. K. (1994). Magnetoluminescence Studies in GaAs-Alxga1-Xas Single Heterojunctions - Observation of Parity-Forbidden Landau-Level Transitions. Physical Review B, 50 (16), 11710-11713.
https://corescholar.libraries.wright.edu/physics/195

DOI

10.1103/PhysRevB.50.11710