Radiative Recombination At the Alxga1-Xas-GaAs Heterostructure Interface by 2-Dimensional Excitons

Authors

D. C. Reynolds
David C. Look, Wright State University - Main CampusFollow
B. Jogai
Phil W. Yu
K. Evans
C. E. Stutz
L. Radomsky

Document Type

Article

Publication Date

9-1-1994

Abstract

Radiative recombination from the Al_xGa_1-xAs-GaAs heterostructure interface was investigated using photoluminescence and photoluminescence-excitation spectroscopy in modulation-doped and undoped samples. This emission is identified as H-band A, resulting from an indirect excitonlike transition in real space. The exciton is made up of a two-dimensional electron in the interface notch and a valence-band hole in the neutral region, having a binding energy of 1.8 meV. The H-band A exciton is directly excited by a free exciton making a vertical transition in real space. H-band A may be a distortion of the vertical direct free exciton in real space to an indirect free exciton in real space, in which case only one exciton is involved; or it could result from the direct excitation of the indirect exciton in real space by the vertical exciton through wave-function overlap, with energy and momentum being conserved. In the latter case two excitons are involved. While the exact coupling mechanism between the free exciton and the H-band A exciton is not well understood, two possibilities are suggested.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v50/i11/p7461_1

Repository Citation

Reynolds, D. C., Look, D. C., Jogai, B., Yu, P. W., Evans, K., Stutz, C. E., & Radomsky, L. (1994). Radiative Recombination At the Alxga1-Xas-GaAs Heterostructure Interface by 2-Dimensional Excitons. Physical Review B, 50 (11), 7461-7466.
https://corescholar.libraries.wright.edu/physics/193

DOI

10.1103/PhysRevB.50.7461