We show that the well-known 0.15-eV donor in bulk GaAs quenches under IR-light illumination and that the quenched (metastable) state has an electronic transition energy about 0.14 eV deeper than the ground state and can be observed by temperature-dependent-resistivity and Hall-effect measurements. The quenched state thermally recovers by an Auger-like process at a rate of r=2.3×10-12 nvn exp(-0.18/kT). Many of the properties exhibited by this donor are similar to those predicted theoretically for the complex defect AsGa-VAs.
Look, D. C.,
& Sizelove, J. R.
(1994). Observation of a Metastable Defect Transition in GaAs. Physical Review B, 49 (23), 16757-16760.