Anomalous Capture and Emission from Internal Surfaces of Semiconductor Voids: Nanopores in SiC

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
S. Soloviev
T. S. Sudarshan
J. J. BoecklFollow

Document Type

Article

Publication Date

5-1-2004

Abstract

Deep level transient spectroscopy in nanoporous, n-type SiC reveals a new type of deep (˜0.8 eV) trap that can hold more than 100 electrons and that has anomalous capture and emission behavior. Here we quantitatively explain these effects with a new, general formalism that treats both emission and capture in the presence of dynamic energy barriers, resulting from the charging and discharging of states on the internal surfaces of voids, such as pores or nanopipes. The capture kinetics display a logarithmic time dependence over a certain filling range, as has often been observed in connection with dislocation-related trapping.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v69/i19/e195205

Repository Citation

Look, D. C., Fang, Z., Soloviev, S., Sudarshan, T. S., & Boeckl, J. J. (2004). Anomalous Capture and Emission from Internal Surfaces of Semiconductor Voids: Nanopores in SiC. Physical Review B, 69 (19), 195205.
https://corescholar.libraries.wright.edu/physics/207

DOI

10.1103/PhysRevB.69.195205